gate leakage current

См. также в других словарях:

• Leakage — describes an unwanted loss, or leak, of something which escapes from its proper location. In everyday usage, leakage is the gradual escape of matter through a leak hole. [ [http://www.m w.com/dictionary/leaking Merriam Webster] ] In different… …   Wikipedia

• Subthreshold Leakage — Bei subthreshold leakage (englisch, dt. ‚Unterschwellspannungsleckstrom‘) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… …   Deutsch Wikipedia

• Subthreshold leakage — Bei subthreshold leakage (dt. »Unterschwellspannungsleckstrom«) handelt es sich um einen so genannten Leckstrom in MOS Transistoren, welche in aktuellen integrierten Schaltungen wie Prozessoren oder Mikrocontrollern verwendet werden.… …   Deutsch Wikipedia

• Subthreshold leakage — or subthreshold conduction or subthreshold drain current is the current that flows between the source and drain of a MOSFET when the transistor is in the subthreshold region, that is, for gate to source voltages below the threshold voltage. The… …   Wikipedia

• Negative bias temperature instability — (NBTI) is a key reliability issue in MOSFETs. It is of immediate concern in p channel MOS devices, since they almost always operate with negative gate to source voltage; however, the very same mechanism affects also nMOS transistors when biased… …   Wikipedia

• SILC (semiconductors) — Stress Induced Leakage Current is an increase in the gate leakage current of a MOSFET, due to defects created in the gate oxide during electrical stressing …   Wikipedia

• Hafnium — lutetium ← hafnium → tantalum Zr ↑ Hf ↓ Rf …   Wikipedia

• SpeedStep — is a trademark for a series of technologies (including SpeedStep, SpeedStep II, and SpeedStep III) built into some Intel microprocessors that allow the clock speed of the processor to be dynamically changed by software. This allows the processor… …   Wikipedia

• Carrier scattering — Defect types include atom vacancies, adatoms, steps, and kinks which occur most frequently at surfaces due to finite material size causing crystal discontinuity. What all types of defects have in common, whether they be surface or bulk, is that… …   Wikipedia

• ток утечки затвора — Ток затвора при заданном напряжении между затвором и остальными выводами, замкнутыми между собой. Обозначение IЗ.ут IGSS [ГОСТ 19095 73] Тематики полупроводниковые приборы EN gate leakage current DE Gaterestrom FR courant de fuite de drain …   Справочник технического переводчика

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia